Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

We show that isovalent indium impurity doping can be employed to control excess-arsenic-related point defects and arsenic clusters in GaAs films grown by molecular-beam epitaxy at low temperature. In respect of arsenic excess, indium doping was found to be equivalent to a decrease in the growth temp...

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Bibliographic Details
Main Authors: Chaldyshev, V.V., Bert, N.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.
Format: Conference Proceeding
Language:English
Subjects:
Crystalline materials
Crystallization
Doping
Gallium arsenide
Impurities
Indium
Molecular beam epitaxial growth
Sheet materials
Superlattices
Temperature control
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Summary:We show that isovalent indium impurity doping can be employed to control excess-arsenic-related point defects and arsenic clusters in GaAs films grown by molecular-beam epitaxy at low temperature. In respect of arsenic excess, indium doping was found to be equivalent to a decrease in the growth temperature, but provided better crystalline quality of the material. Indium delta-doping was used to create two-dimensional sheets of arsenic clusters in the GaAs matrix. We demonstrate a 30-period superlattice of two-dimensional cluster sheets separated by cluster-flee spacers and two cluster sheets sandwiched between n- and p-GaAs layers grown at conventional temperature.
DOI:10.1109/EDMO.1997.668579