Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

We show that isovalent indium impurity doping can be employed to control excess-arsenic-related point defects and arsenic clusters in GaAs films grown by molecular-beam epitaxy at low temperature. In respect of arsenic excess, indium doping was found to be equivalent to a decrease in the growth temp...

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Main Authors: Chaldyshev, V.V., Bert, N.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.
Format: Conference Proceeding
Language:English
Subjects:
Crystalline materials
Crystallization
Doping
Gallium arsenide
Impurities
Indium
Molecular beam epitaxial growth
Sheet materials
Superlattices
Temperature control
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creator Chaldyshev, V.V.
Bert, N.A.
Faleev, N.N.
Kunitsyn, A.E.
Musikhin, Yu.G.
Preobrazhenskii, V.V.
Putyato, M.A.
Semyagin, B.R.
Werner, P.
description We show that isovalent indium impurity doping can be employed to control excess-arsenic-related point defects and arsenic clusters in GaAs films grown by molecular-beam epitaxy at low temperature. In respect of arsenic excess, indium doping was found to be equivalent to a decrease in the growth temperature, but provided better crystalline quality of the material. Indium delta-doping was used to create two-dimensional sheets of arsenic clusters in the GaAs matrix. We demonstrate a 30-period superlattice of two-dimensional cluster sheets separated by cluster-flee spacers and two cluster sheets sandwiched between n- and p-GaAs layers grown at conventional temperature.
doi_str_mv 10.1109/EDMO.1997.668579
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ispartof IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat, 1997, p.91-96
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subjects Crystalline materials
Crystallization
Doping
Gallium arsenide
Impurities
Indium
Molecular beam epitaxial growth
Sheet materials
Superlattices
Temperature control
title Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping
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