HBT SiGe technology dedicated to ultra low phase noise applications

This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs suc...

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Bibliographic Details
Main Authors: Van Haaren, B., Gruhle, A., Regis, M., Mahner, C., Escotte, L., Llopis, O., Plana, R., Graffeuil, J.
Format: Conference Proceeding
Language:English
Subjects:
Appropriate technology
Frequency
Germanium silicon alloys
Heterojunction bipolar transistors
Low-frequency noise
Microwave devices
Microwave technology
Passivation
Phase noise
Silicon germanium
Online Access:Request full text
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Summary:This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs successfully used for the realization of ultra low phase noise microwave oscillators featuring -135 dBc/Hz at 10 kHz offset.
DOI:10.1109/EDMO.1997.668621