GaN Field Effect Transistors with integrated antennas for THz heterodyne detectors

We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.3...

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Bibliographic Details
Main Authors: Dispenza, Massimiliano, Crispoldi, Flavia, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Di Gaspare, Alessandra, Giliberti, Valeria, Casini, Roberto, Ortolani, Michele, Giovine, Ennio, Evangelisti, Florestano
Format: Conference Proceeding
Language:English
Subjects:
Antennas
Cutoff frequency
Gallium nitride
HEMTs
heterodyne detection
high-electron mobility transistors
integrated antenna
Logic gates
Mixers
MODFETs
terahertz
THz
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Summary:We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown.
DOI:10.23919/EuMC.2013.6686764