A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs

In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 μm to 100 μm....

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Main Authors: Schwantuschke, D., Seelmann-Eggebert, M., Bruckner, P., Quay, R., Mikulla, M., Ambacher, O., Kallfass, I.
Format: Conference Proceeding
Language:English
Subjects:
100 nm GaN
AlGaN/GaN-HEMT technology
Capacitance
compact small-signal model
equivilent circuit model
Fingers
HEMTs
Integrated circuit modeling
Logic gates
millimeter-wave
MODFETs
Scalable model
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creator Schwantuschke, D.
Seelmann-Eggebert, M.
Bruckner, P.
Quay, R.
Mikulla, M.
Ambacher, O.
Kallfass, I.
description In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 μm to 100 μm. It accurately covers the frequency range from 100 MHz up to at least 110 GHz and a wide range of bias utilized for typical class-AB operation points of this technology. Both, direct parameter extractions as well as optimization-based techniques were applied for the determination of the model parameters.
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subjects 100 nm GaN
AlGaN/GaN-HEMT technology
Capacitance
compact small-signal model
equivilent circuit model
Fingers
HEMTs
Integrated circuit modeling
Logic gates
millimeter-wave
MODFETs
Scalable model
title A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
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