A robust Ku-band low noise amplifier using an industrial 0.25-µm AlGaN/GaN on SiC process

• Main Authors: Resca, Davide, Scappaviva, Francesco, Florian, Corrado, Rochette, Stephane, Muraro, Jean-Luc, di Giacomo Brunel, Valeria, Chang, Christophe, Baglieri, Didier
• Format: Conference Proceeding
• Language: English
• Subjects: AlGaN/GaN HEMT; Gain; Gallium nitride; HEMTs; Logic gates; Low Noise Amplifier; MMIC amplifier; Noise; Noise measurement; robust amplifier; Robustness

Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power.