4H-SiC Schottky contact improvement for temperature sensor applications

An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed. The effects of the Schottky and ohmic contacts' annealing process conditions are investigated through electrical characterization of the diodes. A thermal treatment at 800°C leads to devices with stable and re...

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Bibliographic Details
Main Authors: Draghici, F., Badila, M., Brezeanu, G., Pristavu, G., Rusu, I., Craciunoiu, F., Pascu, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Nickel
Schottky barriers
Schottky diodes
Silicon carbide
Temperature measurement
Temperature sensors
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Summary:An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed. The effects of the Schottky and ohmic contacts' annealing process conditions are investigated through electrical characterization of the diodes. A thermal treatment at 800°C leads to devices with stable and reproducible electrical behavior. A high performance temperature sensor based on these 4H-SiC Schottky diode has been proved.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2013.6688645