Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Novel 3.3-kV trench IGBT with low loss and low dv AK /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V GE overshoot and then reduces recovery dv AK /dt. Moreover, this effect is enhanced by reducing the...

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Bibliographic Details
Main Authors: Toyota, Yoshiaki, Watanabe, So, Arai, Taiga, Wakagi, Masatoshi, Mori, Mutsuhiro, Shinagawa, Masashi, Azuma, Katsunori, Shima, Yuji, Oda, Tetsuo, Toyoda, Yasushi, Saito, Katsuaki
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Electrodes
Electromagnetic interference
Insulated gate bipolar transistors
Logic gates
Noise
Resistance
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Summary:Novel 3.3-kV trench IGBT with low loss and low dv AK /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V GE overshoot and then reduces recovery dv AK /dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R FP ). It was found that, for the first time, the trade-off characteristics between V CEsat and recovery dv AK /dt were drastically improved by separating p-WELL layers from trench gates and decreasing R FP . The recovery dv AK /dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V CEsat and E on equal to the conventional one.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2013.6694391