High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates

High-voltage AlGaN/GaN HEMTs fabricated on a GaN-on-SOI platform were demonstrated. The GaN-on-SOI wafer features III-nitride epi-layers grown by MOCVD on a modified SOI wafer consisting of a p-type (111) Si device layer, a SiO 2 buried oxide and a p-type (100) Si handle substrate. Depletion- and en...

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Bibliographic Details
Main Authors: Qimeng Jiang, Cheng Liu, Yunyou Lu, Chen, Kevin J.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Silicon
Substrates
Thermal resistance
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Summary:High-voltage AlGaN/GaN HEMTs fabricated on a GaN-on-SOI platform were demonstrated. The GaN-on-SOI wafer features III-nitride epi-layers grown by MOCVD on a modified SOI wafer consisting of a p-type (111) Si device layer, a SiO 2 buried oxide and a p-type (100) Si handle substrate. Depletion- and enhancementmode HEMTs are monolithically integrated. The Enhancement-mode HEMTs obtained by fluorine plasma implantation technique deliver large ON/OFF current ratio (10 7 ), large breakdown voltage (1354 V with floating substrate) and low ON-resistance (3.9 mΩ·cm 2 ). In addition, the impact of the buried oxide on thermal dissipation is estimated by a simple thermal resistance model.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2013.6694431