Low gate capacitance IEGT with Trench Shield Emitter (IEGT-TSE) realizing high frequency operation

A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from f...

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Bibliographic Details
Main Authors: Matsushita, Ken'ichi, Ninomiya, Hideaki, Naijo, Tatsuo, Izumi, Masato, Umekawa, Shinichi
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Electrodes
Energy loss
Integrated circuits
Logic gates
Switches
Citations: Items that cite this one
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Description
Summary:A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2013.6694438