High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

• Main Authors: Qi Zhou, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, Chen, Kevin J.
• Format: Conference Proceeding
• Language: English
• Subjects: Aluminum gallium nitride; Gallium nitride; Gold; HEMTs; high breakdown voltage; InAlN/GaN HEMTs; MODFETs; Schottky-Source technology
• ISSN: 1063-6854; 1946-0201
• DOI: 10.1109/ISPSD.2013.6694479

In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology. Based on this concept, the Schottky-Source (SS) InAlN/GaN HEMTs are proposed. The SS HEMTs with a L GD of 15 μm showed a three-terminal BV of 650 V, while conventional InAlN/GaN HEMTs of the same geometry showed a maximum BV of 184 V. Without using any field-plate the result measured in the proposed device is the highest BV ever achieved on InAlN/GaN HEMTs. The corresponding specific on-resistance (R sp, on ) is as low as 3.4 mΩ·cm 2 . A BV of 118 V was also obtained in an SS InAlN/GaN HEMTs with L GD =1 μm, which is the highest BV in GaN-based HEMTs featuring such a short L GD with GaN buffer.