Bond-wire engineering to improve power performance in multi-cell GaN package devices

Power distribution across large multi-cell GaN packaged device studied through 3D EM simulation to show significant non-uniformity in output power, phase and temperature in unmatched standard parts. A simple technique by changing drain bond-wire lengths to equalize the phase front has been shown to...

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Bibliographic Details
Main Authors: Halder, Subrata, McMacken, John, Runton, Dave
Format: Conference Proceeding
Language:English
Subjects:
Gain
Gallium nitride
GAN HEMTs
Logic gates
Power distribution
Power generation
Power transistors
powerbars
semiconductor device modeling
semiconductor device packaging
Solid modeling
Online Access:Request full text
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Summary:Power distribution across large multi-cell GaN packaged device studied through 3D EM simulation to show significant non-uniformity in output power, phase and temperature in unmatched standard parts. A simple technique by changing drain bond-wire lengths to equalize the phase front has been shown to improve the combining efficiency of the power cells which in turn improves gain and power performance by 10-15% at higher frequencies of 3.5GHz at 48V without sacrificing the low frequency response.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2013.6697383