Bond-wire engineering to improve power performance in multi-cell GaN package devices

Power distribution across large multi-cell GaN packaged device studied through 3D EM simulation to show significant non-uniformity in output power, phase and temperature in unmatched standard parts. A simple technique by changing drain bond-wire lengths to equalize the phase front has been shown to...

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Main Authors: Halder, Subrata, McMacken, John, Runton, Dave
Format: Conference Proceeding
Language:English
Subjects:
Gain
Gallium nitride
GAN HEMTs
Logic gates
Power distribution
Power generation
Power transistors
powerbars
semiconductor device modeling
semiconductor device packaging
Solid modeling
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McMacken, John
Runton, Dave
description Power distribution across large multi-cell GaN packaged device studied through 3D EM simulation to show significant non-uniformity in output power, phase and temperature in unmatched standard parts. A simple technique by changing drain bond-wire lengths to equalize the phase front has been shown to improve the combining efficiency of the power cells which in turn improves gain and power performance by 10-15% at higher frequencies of 3.5GHz at 48V without sacrificing the low frequency response.
doi_str_mv 10.1109/MWSYM.2013.6697383
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Gain
Gallium nitride
GAN HEMTs
Logic gates
Power distribution
Power generation
Power transistors
powerbars
semiconductor device modeling
semiconductor device packaging
Solid modeling
title Bond-wire engineering to improve power performance in multi-cell GaN package devices
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