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A new failure mechanism by corrosion of tungsten in a tungsten plug process
The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines....
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creator | Bothra, S. Sur, H. Liang, V. |
description | The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures. |
doi_str_mv | 10.1109/RELPHY.1998.670473 |
format | conference_proceeding |
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As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</description><identifier>ISBN: 0780344006</identifier><identifier>ISBN: 9780780344006</identifier><identifier>DOI: 10.1109/RELPHY.1998.670473</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bonding ; Circuit testing ; CMOS process ; CMOS technology ; Corrosion ; Electrical resistance measurement ; Failure analysis ; Plugs ; Tungsten ; Very large scale integration</subject><ispartof>1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. 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No.98CH36173)</title><addtitle>RELPHY</addtitle><description>The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</description><subject>Bonding</subject><subject>Circuit testing</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Corrosion</subject><subject>Electrical resistance measurement</subject><subject>Failure analysis</subject><subject>Plugs</subject><subject>Tungsten</subject><subject>Very large scale integration</subject><isbn>0780344006</isbn><isbn>9780780344006</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFj9FKwzAYhQMiqHMvsKu8QOufJm2SyzGmkxUU0QuvRpr-mZE2LUmL7O0dTPDA4ePcfHAIWTHIGQP98LatX3efOdNa5ZUEIfkVuQOpgAsBUN2QZUrfcI4oy3NvyX5NA_5QZ3w3R6Q92i8TfOppc6J2iHFIfgh0cHSawzFNGKgP1PyvsZuPdIyDxZTuybUzXcLlHxfk43H7vtll9cvT82ZdZ56BmDKlQDDVGGCmVZZrKQumoWywEJa1lZUOpNOs4YWU4DivLCjFAVpjSjCF4guyung9Ih7G6HsTT4fLXf4Lf4pK6w</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Bothra, S.</creator><creator>Sur, H.</creator><creator>Liang, V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>A new failure mechanism by corrosion of tungsten in a tungsten plug process</title><author>Bothra, S. ; Sur, H. ; Liang, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-880418ba01ad8c397721905be24c1d6c7f07f91b32770f336c088300daa50a283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bonding</topic><topic>Circuit testing</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Corrosion</topic><topic>Electrical resistance measurement</topic><topic>Failure analysis</topic><topic>Plugs</topic><topic>Tungsten</topic><topic>Very large scale integration</topic><toplevel>online_resources</toplevel><creatorcontrib>Bothra, S.</creatorcontrib><creatorcontrib>Sur, H.</creatorcontrib><creatorcontrib>Liang, V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bothra, S.</au><au>Sur, H.</au><au>Liang, V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new failure mechanism by corrosion of tungsten in a tungsten plug process</atitle><btitle>1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)</btitle><stitle>RELPHY</stitle><date>1998</date><risdate>1998</risdate><spage>150</spage><epage>156</epage><pages>150-156</pages><isbn>0780344006</isbn><isbn>9780780344006</isbn><abstract>The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.1998.670473</doi><tpages>7</tpages></addata></record> |
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identifier | ISBN: 0780344006 |
ispartof | 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.150-156 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Bonding Circuit testing CMOS process CMOS technology Corrosion Electrical resistance measurement Failure analysis Plugs Tungsten Very large scale integration |
title | A new failure mechanism by corrosion of tungsten in a tungsten plug process |
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