Loading…

A new failure mechanism by corrosion of tungsten in a tungsten plug process

The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines....

Full description

Saved in:
Bibliographic Details
Main Authors: Bothra, S., Sur, H., Liang, V.
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 156
container_issue
container_start_page 150
container_title
container_volume
creator Bothra, S.
Sur, H.
Liang, V.
description The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.
doi_str_mv 10.1109/RELPHY.1998.670473
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_670473</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>670473</ieee_id><sourcerecordid>670473</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-880418ba01ad8c397721905be24c1d6c7f07f91b32770f336c088300daa50a283</originalsourceid><addsrcrecordid>eNpFj9FKwzAYhQMiqHMvsKu8QOufJm2SyzGmkxUU0QuvRpr-mZE2LUmL7O0dTPDA4ePcfHAIWTHIGQP98LatX3efOdNa5ZUEIfkVuQOpgAsBUN2QZUrfcI4oy3NvyX5NA_5QZ3w3R6Q92i8TfOppc6J2iHFIfgh0cHSawzFNGKgP1PyvsZuPdIyDxZTuybUzXcLlHxfk43H7vtll9cvT82ZdZ56BmDKlQDDVGGCmVZZrKQumoWywEJa1lZUOpNOs4YWU4DivLCjFAVpjSjCF4guyung9Ih7G6HsTT4fLXf4Lf4pK6w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A new failure mechanism by corrosion of tungsten in a tungsten plug process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Bothra, S. ; Sur, H. ; Liang, V.</creator><creatorcontrib>Bothra, S. ; Sur, H. ; Liang, V.</creatorcontrib><description>The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</description><identifier>ISBN: 0780344006</identifier><identifier>ISBN: 9780780344006</identifier><identifier>DOI: 10.1109/RELPHY.1998.670473</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bonding ; Circuit testing ; CMOS process ; CMOS technology ; Corrosion ; Electrical resistance measurement ; Failure analysis ; Plugs ; Tungsten ; Very large scale integration</subject><ispartof>1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.150-156</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/670473$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/670473$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bothra, S.</creatorcontrib><creatorcontrib>Sur, H.</creatorcontrib><creatorcontrib>Liang, V.</creatorcontrib><title>A new failure mechanism by corrosion of tungsten in a tungsten plug process</title><title>1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)</title><addtitle>RELPHY</addtitle><description>The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</description><subject>Bonding</subject><subject>Circuit testing</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Corrosion</subject><subject>Electrical resistance measurement</subject><subject>Failure analysis</subject><subject>Plugs</subject><subject>Tungsten</subject><subject>Very large scale integration</subject><isbn>0780344006</isbn><isbn>9780780344006</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFj9FKwzAYhQMiqHMvsKu8QOufJm2SyzGmkxUU0QuvRpr-mZE2LUmL7O0dTPDA4ePcfHAIWTHIGQP98LatX3efOdNa5ZUEIfkVuQOpgAsBUN2QZUrfcI4oy3NvyX5NA_5QZ3w3R6Q92i8TfOppc6J2iHFIfgh0cHSawzFNGKgP1PyvsZuPdIyDxZTuybUzXcLlHxfk43H7vtll9cvT82ZdZ56BmDKlQDDVGGCmVZZrKQumoWywEJa1lZUOpNOs4YWU4DivLCjFAVpjSjCF4guyung9Ih7G6HsTT4fLXf4Lf4pK6w</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Bothra, S.</creator><creator>Sur, H.</creator><creator>Liang, V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>A new failure mechanism by corrosion of tungsten in a tungsten plug process</title><author>Bothra, S. ; Sur, H. ; Liang, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-880418ba01ad8c397721905be24c1d6c7f07f91b32770f336c088300daa50a283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bonding</topic><topic>Circuit testing</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Corrosion</topic><topic>Electrical resistance measurement</topic><topic>Failure analysis</topic><topic>Plugs</topic><topic>Tungsten</topic><topic>Very large scale integration</topic><toplevel>online_resources</toplevel><creatorcontrib>Bothra, S.</creatorcontrib><creatorcontrib>Sur, H.</creatorcontrib><creatorcontrib>Liang, V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bothra, S.</au><au>Sur, H.</au><au>Liang, V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new failure mechanism by corrosion of tungsten in a tungsten plug process</atitle><btitle>1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)</btitle><stitle>RELPHY</stitle><date>1998</date><risdate>1998</risdate><spage>150</spage><epage>156</epage><pages>150-156</pages><isbn>0780344006</isbn><isbn>9780780344006</isbn><abstract>The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.1998.670473</doi><tpages>7</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 0780344006
ispartof 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.150-156
issn
language eng
recordid cdi_ieee_primary_670473
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bonding
Circuit testing
CMOS process
CMOS technology
Corrosion
Electrical resistance measurement
Failure analysis
Plugs
Tungsten
Very large scale integration
title A new failure mechanism by corrosion of tungsten in a tungsten plug process
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T20%3A12%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20new%20failure%20mechanism%20by%20corrosion%20of%20tungsten%20in%20a%20tungsten%20plug%20process&rft.btitle=1998%20IEEE%20International%20Reliability%20Physics%20Symposium%20Proceedings.%2036th%20Annual%20(Cat.%20No.98CH36173)&rft.au=Bothra,%20S.&rft.date=1998&rft.spage=150&rft.epage=156&rft.pages=150-156&rft.isbn=0780344006&rft.isbn_list=9780780344006&rft_id=info:doi/10.1109/RELPHY.1998.670473&rft_dat=%3Cieee_6IE%3E670473%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i104t-880418ba01ad8c397721905be24c1d6c7f07f91b32770f336c088300daa50a283%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=670473&rfr_iscdi=true