Effect of VLSI interconnect layout on electromigration performance

We characterized the reliability of multiple-via contacts, as well as the impact of the contact current direction on the failure statistics and short-length effects in Ti-Al(Cu)-Ti-TiN lines. A significant difference between the sheet resistances of the top and bottom shunting layers results in a bi...

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Bibliographic Details
Main Authors: Atakov, E.M., Sriram, T.S., Dunnell, D., Pizzanello, S.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Current density
Electric resistance
Electromigration
Electrons
Integrated circuit interconnections
Stress
Testing
Tin
Very large scale integration
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Summary:We characterized the reliability of multiple-via contacts, as well as the impact of the contact current direction on the failure statistics and short-length effects in Ti-Al(Cu)-Ti-TiN lines. A significant difference between the sheet resistances of the top and bottom shunting layers results in a bimodal failure time distribution for the downward electron flow direction. It also causes a significant difference in the short-length resistance saturation for the two current directions.
DOI:10.1109/RELPHY.1998.670668