Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

With an in situ low-damage NH 3 -Ar-N 2 plasma pre-gate treatment, a high-quality Al 2 O 3 /GaN-cap interface has been obtained in the Al 2 O 3 /GaN/AlGaN/GaN MIS-structures. Frequency- and temperature-dependent C-V characterization techniques were developed to map the interface trap density (D it )...

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Bibliographic Details
Main Authors: Shu Yang, Zhikai Tang, King-Yuen Wong, Yu-Syuan Lin, Yunyou Lu, Sen Huang, Chen, Kevin J.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Aluminum oxide
Capacitance-voltage characteristics
Dielectrics
Gallium nitride
Logic gates
Plasmas
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Summary:With an in situ low-damage NH 3 -Ar-N 2 plasma pre-gate treatment, a high-quality Al 2 O 3 /GaN-cap interface has been obtained in the Al 2 O 3 /GaN/AlGaN/GaN MIS-structures. Frequency- and temperature-dependent C-V characterization techniques were developed to map the interface trap density (D it ) at the dielectric/III-nitride interface, whereby a low D it of ~10 12 -10 13 cm -2 eV -1 in the Al 2 O 3 /GaN/AlGaN/GaN MIS-structures was extracted. The mechanism for the high-quality interface was validated to be effective removal of native oxide and the subsequent formation of a monocrystal-like nitridation inter-layer on the GaN surface. Both D it mapping and the pre-gate treatment techniques are of significance for the improvement of III-nitride MIS-HEMTs.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2013.6724573