Exploring the design of ultra-low energy global interconnects based on spin-torque switches

Emerging spin-torque phenomena, like Spin Hall Effect (SHE), may lead to high-speed, low-voltage current-mode switches based on nano-scale magnets. In this work we propose and analyze the application of such spin-torque switches in the design of energy-efficient and high-performance current-mode on-...

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Bibliographic Details
Main Authors: Sharad, Mrigank, Xuanyao Fong, Roy, Kaushik
Format: Conference Proceeding
Language:English
Subjects:
CMOS
Energy use
High speed
Integrated circuit interconnections
Interconnections
Magnetic domains
Magnetic tunneling
Magnetoresistive random access memory
Optimization
Perpendicular magnetic anisotropy
Sensors
Simulation
Switches
System-on-chip
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Description
Summary:Emerging spin-torque phenomena, like Spin Hall Effect (SHE), may lead to high-speed, low-voltage current-mode switches based on nano-scale magnets. In this work we propose and analyze the application of such spin-torque switches in the design of energy-efficient and high-performance current-mode on-chip global-interconnects. Simulations show the possibility of achieving up to two order of magnitude higher energy-efficiency as compared to conventional CMOS techniques, for optimal spin-device parameters. A case study for on-chip MRAM cache simulation shows ~90% reduction in energy for on-chip memory access, using the proposed interconnect design.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2013.6724739