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Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution
Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm 2 smallest...
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creator | Kervran, Y. Janfaoui, S. De Sagazan, O. Crand, S. Coulon, N. Gauthier, J. P. Mohammed-Brahim, T. |
description | Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm 2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations. |
doi_str_mv | 10.1109/ICSensT.2013.6727724 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_6727724</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6727724</ieee_id><sourcerecordid>6727724</sourcerecordid><originalsourceid>FETCH-LOGICAL-h288t-e8f5d175902ccf8166425927f71e9cd620dd66481428f4d7cd7ca665c50b42923</originalsourceid><addsrcrecordid>eNo9kNtKAzEQhqMoWOo-gV7kBXZNZjenSykeChUvrNclm026kXS3JFu0b2-kxWFgPr4fBmYQuqekopSoh-Xiww5pXQGhdcUFCAHNBSqUkLThomaQ6xLNgDJeSiLqq3_m7AYVKX0RQiiXUCs5Q_7NmziaeEyTDsEPFicfvBkHvNWHrU04kwv2x7chR4c2TVFPWbsx4t5ve9zZjDs9-XFI-NtP_UmnfVY64GjTGA5_6S26djokW5znHH0-P60Xr-Xq_WW5eFyVPUg5lVY61lHBFAFjnKScN8AUCCeoVabjQLouu3wsSNd0wuTWnDPDSNuAgnqO7k57vbV2s49-p-Nxc35U_QvFfl1m</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution</title><source>IEEE Xplore All Conference Series</source><creator>Kervran, Y. ; Janfaoui, S. ; De Sagazan, O. ; Crand, S. ; Coulon, N. ; Gauthier, J. P. ; Mohammed-Brahim, T.</creator><creatorcontrib>Kervran, Y. ; Janfaoui, S. ; De Sagazan, O. ; Crand, S. ; Coulon, N. ; Gauthier, J. P. ; Mohammed-Brahim, T.</creatorcontrib><description>Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm 2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations.</description><identifier>ISSN: 2156-8065</identifier><identifier>EISSN: 2156-8073</identifier><identifier>EISBN: 9781467352222</identifier><identifier>EISBN: 9781467352208</identifier><identifier>EISBN: 1467352209</identifier><identifier>EISBN: 1467352225</identifier><identifier>DOI: 10.1109/ICSensT.2013.6727724</identifier><language>eng</language><publisher>IEEE</publisher><subject>flexible substrate ; Microcrystalline silicon ; resistor ; Resistors ; Sensors ; Silicon ; spatial resolution ; Strain ; strain gauge ; Substrates ; Thin film transistors ; transistor</subject><ispartof>2013 Seventh International Conference on Sensing Technology (ICST), 2013, p.603-607</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6727724$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6727724$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kervran, Y.</creatorcontrib><creatorcontrib>Janfaoui, S.</creatorcontrib><creatorcontrib>De Sagazan, O.</creatorcontrib><creatorcontrib>Crand, S.</creatorcontrib><creatorcontrib>Coulon, N.</creatorcontrib><creatorcontrib>Gauthier, J. P.</creatorcontrib><creatorcontrib>Mohammed-Brahim, T.</creatorcontrib><title>Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution</title><title>2013 Seventh International Conference on Sensing Technology (ICST)</title><addtitle>ICSensT</addtitle><description>Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm 2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations.</description><subject>flexible substrate</subject><subject>Microcrystalline silicon</subject><subject>resistor</subject><subject>Resistors</subject><subject>Sensors</subject><subject>Silicon</subject><subject>spatial resolution</subject><subject>Strain</subject><subject>strain gauge</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>transistor</subject><issn>2156-8065</issn><issn>2156-8073</issn><isbn>9781467352222</isbn><isbn>9781467352208</isbn><isbn>1467352209</isbn><isbn>1467352225</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9kNtKAzEQhqMoWOo-gV7kBXZNZjenSykeChUvrNclm026kXS3JFu0b2-kxWFgPr4fBmYQuqekopSoh-Xiww5pXQGhdcUFCAHNBSqUkLThomaQ6xLNgDJeSiLqq3_m7AYVKX0RQiiXUCs5Q_7NmziaeEyTDsEPFicfvBkHvNWHrU04kwv2x7chR4c2TVFPWbsx4t5ve9zZjDs9-XFI-NtP_UmnfVY64GjTGA5_6S26djokW5znHH0-P60Xr-Xq_WW5eFyVPUg5lVY61lHBFAFjnKScN8AUCCeoVabjQLouu3wsSNd0wuTWnDPDSNuAgnqO7k57vbV2s49-p-Nxc35U_QvFfl1m</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Kervran, Y.</creator><creator>Janfaoui, S.</creator><creator>De Sagazan, O.</creator><creator>Crand, S.</creator><creator>Coulon, N.</creator><creator>Gauthier, J. P.</creator><creator>Mohammed-Brahim, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20131201</creationdate><title>Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution</title><author>Kervran, Y. ; Janfaoui, S. ; De Sagazan, O. ; Crand, S. ; Coulon, N. ; Gauthier, J. P. ; Mohammed-Brahim, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h288t-e8f5d175902ccf8166425927f71e9cd620dd66481428f4d7cd7ca665c50b42923</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>flexible substrate</topic><topic>Microcrystalline silicon</topic><topic>resistor</topic><topic>Resistors</topic><topic>Sensors</topic><topic>Silicon</topic><topic>spatial resolution</topic><topic>Strain</topic><topic>strain gauge</topic><topic>Substrates</topic><topic>Thin film transistors</topic><topic>transistor</topic><toplevel>online_resources</toplevel><creatorcontrib>Kervran, Y.</creatorcontrib><creatorcontrib>Janfaoui, S.</creatorcontrib><creatorcontrib>De Sagazan, O.</creatorcontrib><creatorcontrib>Crand, S.</creatorcontrib><creatorcontrib>Coulon, N.</creatorcontrib><creatorcontrib>Gauthier, J. P.</creatorcontrib><creatorcontrib>Mohammed-Brahim, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kervran, Y.</au><au>Janfaoui, S.</au><au>De Sagazan, O.</au><au>Crand, S.</au><au>Coulon, N.</au><au>Gauthier, J. P.</au><au>Mohammed-Brahim, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution</atitle><btitle>2013 Seventh International Conference on Sensing Technology (ICST)</btitle><stitle>ICSensT</stitle><date>2013-12-01</date><risdate>2013</risdate><spage>603</spage><epage>607</epage><pages>603-607</pages><issn>2156-8065</issn><eissn>2156-8073</eissn><eisbn>9781467352222</eisbn><eisbn>9781467352208</eisbn><eisbn>1467352209</eisbn><eisbn>1467352225</eisbn><abstract>Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm 2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations.</abstract><pub>IEEE</pub><doi>10.1109/ICSensT.2013.6727724</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | flexible substrate Microcrystalline silicon resistor Resistors Sensors Silicon spatial resolution Strain strain gauge Substrates Thin film transistors transistor |
title | Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T18%3A57%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Microcrystalline%20silicon%20gauges%20on%20flexible%20substrates%20for%20high%20deformations%20with%20high%20spatial%20resolution&rft.btitle=2013%20Seventh%20International%20Conference%20on%20Sensing%20Technology%20(ICST)&rft.au=Kervran,%20Y.&rft.date=2013-12-01&rft.spage=603&rft.epage=607&rft.pages=603-607&rft.issn=2156-8065&rft.eissn=2156-8073&rft_id=info:doi/10.1109/ICSensT.2013.6727724&rft.eisbn=9781467352222&rft.eisbn_list=9781467352208&rft.eisbn_list=1467352209&rft.eisbn_list=1467352225&rft_dat=%3Cieee_CHZPO%3E6727724%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-h288t-e8f5d175902ccf8166425927f71e9cd620dd66481428f4d7cd7ca665c50b42923%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6727724&rfr_iscdi=true |