Two parameter extraction solutions for high temperature SiC Schottky diodes - Converging to reality

This paper presents two methods of parameter extraction for SiC Schottky diodes. These methods are implemented and tested for characteristics of real devices (SiC Schottky diodes). Extra attention is paid to how these two methods can converge to the same solution and how the extracted results can of...

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Bibliographic Details
Main Authors: Pristavu, Gh, Brezeanu, Gh, Draghici, F.
Format: Conference Proceeding
Language:English
Subjects:
contact area
ideality factor
Parameter extraction
Schottky barrier
Schottky barriers
Schottky diodes
SiC Schottky diode
Silicon carbide
Temperature
Temperature measurement
Temperature sensors
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Summary:This paper presents two methods of parameter extraction for SiC Schottky diodes. These methods are implemented and tested for characteristics of real devices (SiC Schottky diodes). Extra attention is paid to how these two methods can converge to the same solution and how the extracted results can offer valuable information about potential device technology improvement.
DOI:10.1109/SIITME.2013.6743669