Series resistance mapping of III-V multijunction solar cells based on luminescence imaging

A method for spatially resolved series resistance measurements of Ga 0.5 In 0.5 P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the ser...

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Bibliographic Details
Main Authors: Nesswetter, Helmut, Dyck, Wilhelm, Lugli, Paolo, Bett, Andreas W., Zimmermann, Claus G.
Format: Conference Proceeding
Language:English
Subjects:
electroluminescence
Imaging
Lighting
Luminescence
multijunction photovoltaic cells
photoluminescence
Photovoltaic cells
Resistance
series resistance
Spatial resolution
Online Access:Request full text
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Summary:A method for spatially resolved series resistance measurements of Ga 0.5 In 0.5 P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744103