Refractive index properties of oxygenated amorphous CdS thin film deposited by rf-sputtering

The refractive index of 1.21 to 2.38 of oxygenated amorphous CdS thin films can be fabricated by using reactive RF-Sputtering from CdS target of 4N of purity. The oxygenated amorphous CdS with 2.3 of refractive index has a band gap of 2.5 e V. These properties are optically appropriate for matching...

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Bibliographic Details
Main Authors: Rejon, Victor, Loeza, Mariely, Riech, Ines, Pena, Juan Luis
Format: Conference Proceeding
Language:English
Subjects:
Amorphous CdS
Antireflective thin film
Argon
Optical films
Optical refraction
Oxygenated CdS
Photonic band gap
Photovoltaic cells
Refractive index
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Summary:The refractive index of 1.21 to 2.38 of oxygenated amorphous CdS thin films can be fabricated by using reactive RF-Sputtering from CdS target of 4N of purity. The oxygenated amorphous CdS with 2.3 of refractive index has a band gap of 2.5 e V. These properties are optically appropriate for matching the ITO and CdTe thin films in amorphous-CdS/CdTe solar cells application. For 10-20% of Oxygen/Argon and 50-70 Watts of the RF-Sputtering power, all thin film shows high transmittance, low refractive index of 1.21 and 3.7 eV of band gap. XRD spectra shows amorphous evidence. This thin film could be used as an antireflective layer on glass substrate.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744348