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Ultra-thin single crystal silicon modules capable of 450 W/kg and bending radii <1mm: Fabrication and characterization
We present ultra-thin single crystal mini-modules built with specific power of 450 W/kg capable of voltages of >1000 V/cm 2 . These modules are also ultra-flexible with tight bending radii down to 1 mm. The module is composed of hundreds of back contact microcells with thicknesses of approximatel...
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Main Authors: | , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | We present ultra-thin single crystal mini-modules built with specific power of 450 W/kg capable of voltages of >1000 V/cm 2 . These modules are also ultra-flexible with tight bending radii down to 1 mm. The module is composed of hundreds of back contact microcells with thicknesses of approximately 20 μm and diameters between 500-720 μm. The cells are interconnected to a flexible circuit through solder contacts. We studied the characteristics of several mini-modules through optical inspection, evaluation of quantum efficiency, measurement of current-voltage curves, and temperature dependence. Major efficiency losses are caused by missing cells or non-interconnected cells. Secondarily, damage incurred during separation of 500 μm cells from the substrate caused material detachment. The detachment induced higher recombination and low performance. Modules made with the larger cells (720 μm) performed better due to having no missing cells, no material detachment and optimized AR coatings. The conversion efficiency of the best mini module was 13.75% with a total V oc = 7.9 V. |
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ISSN: | 0160-8371 |
DOI: | 10.1109/PVSC.2013.6744359 |