Modeling photoluminescence spatial mapping of an isolated defect under uniform and selective excitation

In this work, two different excitation/detection modes, U/L mode and L/L mode for probing an extended defect are compared and discussed. A contrast function is introduced to describe the influence of the defect. We have found that the contrast function not only depends on dimensionality of the syste...

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Bibliographic Details
Main Authors: Fengxiang Chen, Yong Zhang, Gfroerer, T. H., Finger, A. N., Wanlass, M. W.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier density
contrast function
diffusion
extended defect
Gallium arsenide
Laser beams
Mathematical model
modeling
Photoluminescence
recombination
Spatial resolution
Steady-state
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Description
Summary:In this work, two different excitation/detection modes, U/L mode and L/L mode for probing an extended defect are compared and discussed. A contrast function is introduced to describe the influence of the defect. We have found that the contrast function not only depends on dimensionality of the system (1-D vs. 2-D), but also depends on the excitation/detection mode. Photoluminescence mapping data using the two modes to study an isolated defect in GaAs are analyzed using our models. The results suggest that the L/L mode can, in principle, offer significantly better spatial resolution than the U/L mode.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744406