A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control

This paper presents a 40nm 1.0Mb pipeline 6T SRAM featuring digital-based Bit-Line Under-Drive (BLUD) with large-signal sensing and Three-Step-Up Word-Line (TSUWL) to improve RSNM, Read performance and Write-ability. An Adaptive Data-Aware Write-Assist (ADAWA) with VCS tracking is employed to furthe...

Full description

Saved in:
Bibliographic Details
Main Authors: Wei-Nan Liao, Nan-Chun Lien, Chi-Shin Chang, Li-Wei Chu, Hao-I Yang, Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang, Ming-Hsien Tu, Huan-Shun Huang, Jian-Hao Wang, Kan, Paul-Sen, Yong-Jyun Hu
Format: Conference Proceeding
Language:English
Subjects:
Abstracts
Capacitors
Clocks
Logic gates
MOS devices
Random access memory
System-on-chip
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a 40nm 1.0Mb pipeline 6T SRAM featuring digital-based Bit-Line Under-Drive (BLUD) with large-signal sensing and Three-Step-Up Word-Line (TSUWL) to improve RSNM, Read performance and Write-ability. An Adaptive Data-Aware Write-Assist (ADAWA) with VCS tracking is employed to further improve Write-ability while ensuring adequate stability for half-selected cells on the selected bit-lines. An Adaptive Voltage Detector (AVD) with binary boosting control is used to mitigate gate dielectric over-stress. The 1.0Mb test chip operates from 1.5V to 0.7V, with operating frequency of 1.07GHz@1.2V and 887MHz@1.1V at 25°C. The measured power consumption is 43.47mW (Active)/3.91mW (Leakage) at 1.1V and 8.97mW (Active)/0.52mW (Leakage) at 0.7V, TT, 25°C.
ISSN:2164-1676
2164-1706
DOI:10.1109/SOCC.2013.6749670