5.1 POWER8TM: A 12-core server-class processor in 22nm SOI with 7.6Tb/s off-chip bandwidth

The 12-core 649mm 2 POWER8™ leverages IBM's 22nm eDRAM SOI technology [1], and microarchitectural enhancements to deliver up to 2.5× the socket performance [2] of its 32nm predecessor, POWER7+™ [3]. POWER8 contains 4.2B transistors and 31.5μF of deep-trench decoupling capacitance. Three thin-ox...

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Bibliographic Details
Main Authors: Fluhr, Eric J., Friedrich, Joshua, Dreps, Daniel, Zyuban, Victor, Still, Gregory, Gonzalez, Christopher, Hall, Allen, Hogenmiller, David, Malgioglio, Frank, Nett, Ryan, Paredes, Jose, Pille, Juergen, Plass, Donald, Puri, Ruchir, Restle, Phillip, Shan, David, Stawiasz, Kevin, Deniz, Zeynep Toprak, Wendel, Dieter, Ziegler, Matt
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Bandwidth
Clocks
Hardware
Random access memory
Transistors
Voltage control
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Summary:The 12-core 649mm 2 POWER8™ leverages IBM's 22nm eDRAM SOI technology [1], and microarchitectural enhancements to deliver up to 2.5× the socket performance [2] of its 32nm predecessor, POWER7+™ [3]. POWER8 contains 4.2B transistors and 31.5μF of deep-trench decoupling capacitance. Three thin-oxide transistor V t s are used for power/performance tuning, and thick-oxide transistors enable high-voltage I/O and analog designs. The 15-layer BEOL contains 5-80nm, 2-144nm, 3-288nm, and 3-640nm pitch layers for low-latency communication as well as 2-2400nm ultra-thick-metal (UTM) pitch layers for low-resistance distribution of power and clocks.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2014.6757353