Narrow Linewidth 177.3-nm Nanosecond Laser With High Efficiency and High Power

We demonstrate a high-efficiency high average power vacuum ultraviolet (VUV) 177.3-nm laser with a narrow linewidth generated by second harmonic (SH) generation from a nanosecond (ns) 355-nm laser in the KBe 2 BO 3 F 2 crystal. The 355-nm pumping source was a frequency-tripled Q-switched 1064-nm Nd:...

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Bibliographic Details
Published in:IEEE photonics technology letters 2014-05, Vol.26 (10), p.980-982
Main Authors: Xu, Zhi, Tu, Wei, Yang, Feng, Zong, Nan, Wang, Bao-Shan, Zhang, Feng-Feng, Zhang, Shen-Jin, Wang, Zhi-Min, Peng, Qin-Jun, Cui, Da-Fu, Zhang, Jing-Yuan, Wang, Xiao-Yang, Chen, Chuang-Tian, Xu, Zu-Yan
Format: Article
Language:English
Subjects:
Bandwidth
Coherent light
Conversion
Crystals
Efficiency
Frequency conversion
Laser beams
Lasers
Nanostructure
Photolithography
Power generation
Power lasers
Pump lasers
Pumps
Semiconductors
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Summary:We demonstrate a high-efficiency high average power vacuum ultraviolet (VUV) 177.3-nm laser with a narrow linewidth generated by second harmonic (SH) generation from a nanosecond (ns) 355-nm laser in the KBe 2 BO 3 F 2 crystal. The 355-nm pumping source was a frequency-tripled Q-switched 1064-nm Nd:YAG oscillator-amplifier laser system, in which a quartz etalon was used to compress the linewidth of 1064-nm laser. Under a pump power of 5.2 W at 355 nm with a linewidth of 2 pm, a high average power of 146.5 mW at 177.3 nm with a linewidth of ~0.71 pm was obtained, corresponding to an SH conversion efficiency as high as 2.8%. This is, to the best of our knowledge, the highest output power and highest SH conversion efficiency for the ns 177.3-nm lasers. This VUV coherent light can be used as light source for fine precision spectroscopy and semiconductor photolithography owing to its narrow linewidth, high energy resolution, and high average power.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2014.2311091