Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which in...

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Bibliographic Details
Main Authors: Dinh, T. V., Pijper, R., Vanhoucke, T., Gridelet, E., Klaassen, D. B. M.
Format: Conference Proceeding
Language:English
Subjects:
breakdown
cut-off frequency
Harmonic analysis
high voltage
large signal
Linearity
Low voltage
power
Power measurement
Power system harmonics
Radio frequency
SiGe HBTs
Silicon germanium
small signal
Transient analysis
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Description
Summary:Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2013.6798132