On the nature of "permanent" degradation in NBTI

This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be "permanent", is presented for measurements including a methodology w...

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Bibliographic Details
Main Authors: Nguyen, D. D., Kouhestani, C., Kambour, K. E., Devine, R. A. B.
Format: Conference Proceeding
Language:English
Subjects:
MOS devices
NBTI defects
reliability
Stress
Stress measurement
Temperature measurement
Threshold voltage
Time measurement
Voltage measurement
Online Access:Request full text
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Description
Summary:This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be "permanent", is presented for measurements including a methodology which allows the direct measurement of the time dependent growth/recovery of the interface state component.
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2013.6804181