Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO 2 ) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remark...

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Bibliographic Details
Published in:IEEE electron device letters 2014-06, Vol.35 (6), p.630-632
Main Authors: Zhang, Rui, Young, Tai-Fa, Chen, Min-Chen, Chen, Hsin-Lu, Liang, Shu-Ping, Syu, Yong-En, Sze, Simon M., Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Huang, Syuan-Yong, Chen, Wen-Jen, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Educational institutions
Electrodes
Electronics
Exact sciences and technology
Indium tin oxide
Integrated circuits
Integrated circuits by function (including memories and processors)
Oxygen accumulation
Resistance
RRAM
Schottky emission
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Switches
Tin
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Summary:In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO 2 ) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2316806