Three-dimensional on-chip inductor design based on through-silicon vias

In this paper two kinds of three-dimensional (3D) on-chip inductor structures based on through-silicon vias (TSVs) are presented, which are quite suitable for applications in 3D integrated circuits. Their electromagnetic characteristics are analyzed by full-wave electromagnetic simulations and compa...

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Bibliographic Details
Main Authors: Feng Liang, Si-Qi Zhao, Aobo Chen, Gaofeng Wang
Format: Conference Proceeding
Language:English
Subjects:
Inductance
Inductors
Spirals
Substrates
System-on-chip
Three-dimensional displays
Through-silicon vias
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Summary:In this paper two kinds of three-dimensional (3D) on-chip inductor structures based on through-silicon vias (TSVs) are presented, which are quite suitable for applications in 3D integrated circuits. Their electromagnetic characteristics are analyzed by full-wave electromagnetic simulations and compared to those of planar spiral inductors. The results reveal that the 3D inductors based on TSVs have much smaller area as compared to the planar spiral inductors with the same inductance.
ISSN:2162-7541
2162-755X
DOI:10.1109/ASICON.2013.6812066