Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications

This work presents an in-depth wide-frequency band assessment of 28 nm FDSOI MOSFETs for analogue and RF applications. The focus is mainly on such figures of merit (FoM) as the transconductance g m , the output conductance g d , the intrinsic gain A v and the cut-off frequencies f t and f max . Firs...

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Bibliographic Details
Main Authors: Makovejev, S., Esfeh, B. Kazemi, Barral, V., Planes, N., Haond, M., Flandre, D., Raskin, J-P, Kilchytska, V.
Format: Conference Proceeding
Language:English
Subjects:
analogue FoM
Frequency dependence
Immune system
Logic gates
MOSFET
Radio frequency
self-heating
SOI
Substrates
Thermal resistance
UTBB
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Summary:This work presents an in-depth wide-frequency band assessment of 28 nm FDSOI MOSFETs for analogue and RF applications. The focus is mainly on such figures of merit (FoM) as the transconductance g m , the output conductance g d , the intrinsic gain A v and the cut-off frequencies f t and f max . Firstly, 28 nm FDSOI MOSFETs are compared with other advanced devices and are shown to outperform them. Secondly, g m -A v analogue metrics is demonstrated to be affected by operation frequency. Small-signal parameters variation is limited and dominated by self-heating effect. This is in contrast to the first generation of ultra-thin body and BOX devices without a ground plane where coupling through the substrate has a considerable effect. Thirdly, the self-heating effect is analysed and shown to be smaller than previously predicted by simulations for such devices. Fourthly, it is shown that f t reaches ~270 GHz in the shortest devices.
DOI:10.1109/ULIS.2014.6813904