Novel back-biased UTBB lateral SCR for FDSOI ESD protections

For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new con...

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Bibliographic Details
Main Authors: Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alexandre, Fenouillet-Beranger, Claire, Ferrari, Philippe, Cristoloveanu, Sorin
Format: Conference Proceeding
Language:English
Subjects:
Electrostatic discharges
Integrated circuits
Leakage currents
Logic gates
MOSFET
Thyristors
Online Access:Request full text
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Summary:For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new control technique is proposed: the use of back-gate biasing. Characteristics such as low leakage, controllable triggering (as a function of back gate voltage and ground-plane type), and device geometry are explored. We discuss several configurations (floating or locked P-base) and show promising results in terms of ESD protection performance.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2013.6818859