Micron-scale inkjet-assisted digital lithography for large-area flexible electronics

Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and...

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Bibliographic Details
Main Authors: Sporea, R. A., Alshammari, A. S., Georgakopoulos, S., Underwood, J., Shkunov, M., Silva, S. R. P.
Format: Conference Proceeding
Language:English
Subjects:
Electrodes
Ink
Logic gates
Metals
Printing
Substrates
Transistors
Online Access:Request full text
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Summary:Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and does not require a high-temperature sintering step. However, this method can produce large variations in gap size resulting in inconsistent and irreproducible transistor drain current. We propose that source-gated transistors (SGTs) are well suited to this technique, as they have a saturated drain current independent of source-drain separation, thus leading to improved current uniformity despite inconsistencies in gap size.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2013.6818873