A sub 1-V SOI CMOS low noise amplifier for L-band applications

This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm...

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Bibliographic Details
Main Authors: Komurasaki, H., Sato, H., Sasaki, N., Ueda, K., Maeda, S., Yamaguchi, Y., Miki, T.
Format: Conference Proceeding
Language:English
Subjects:
Batteries
CMOS process
CMOS technology
Electrodes
L-band
Low-noise amplifiers
MOSFET circuits
Parasitic capacitance
Silicon on insulator technology
Threshold voltage
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Description
Summary:This paper describes a sub 1.0 V low noise amplifier in a 0.35 /spl mu/m SOI (silicon on insulator) CMOS process. Active-body control enables a sub 1.0 V operation, and improves gain and the 1 dB-compression point. The gain of 7.0 dB, the NF of 3.6 dB and the input 1 dB-compression point of -4.5 dBm are obtained at 1.0 V and 1.9 GHz.
ISSN:1097-2633
2375-1002
DOI:10.1109/RFIC.1998.682069