Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

Leakage currents as low as 10 -7 A/cm 2 at both 1 V and -1 V top electrode bias in the sub-0.4-nm equivalent SiO 2 thickness range are demonstrated in Ru/SrTiO x /Ru metal- insulator-metal capacitors in which the 8.5-nm SrTiO x layer is deposited by atomic layer deposition. The top electrode materia...

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Bibliographic Details
Published in:IEEE electron device letters 2014-07, Vol.35 (7), p.753-755
Main Authors: Swerts, Johan, Popovici, Mihaela, Kaczer, Ben, Aoulaiche, Marc, Redolfi, Augusto, Clima, Sergiu, Caillat, Christian, Wan Chih Wang, Afanasev, Valeri V., Jourdan, Nicolas, Olk, Christina, Hody, Hubert, Van Elshocht, Sven, Jurczak, Malgorzata
Format: Article
Language:English
Subjects:
Acoustic wave devices, piezoelectric and piezoresistive devices
Applied sciences
Capacitors
Design. Technologies. Operation analysis. Testing
dielectric devices
Dielectric, amorphous and glass solid devices
DRAM
Electrodes
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Leakage currents
MIM capacitors
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SrTiO
Tin
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Summary:Leakage currents as low as 10 -7 A/cm 2 at both 1 V and -1 V top electrode bias in the sub-0.4-nm equivalent SiO 2 thickness range are demonstrated in Ru/SrTiO x /Ru metal- insulator-metal capacitors in which the 8.5-nm SrTiO x layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2322632