Integration of ALD barrier and CVD Ru liner for void free PVD Cu reflow process on sub-10nm node technologies

Cu-fill extendability is demonstrated with a novel integration scheme using clustered ALD barrier, CVD Ru liner and PVD Cu dry-fill processes. ALD barrier films were developed and integrated with a 2nm CVD-Ru (replacing the traditional PVD Ta and PVD Cu seed), and a single-step PVD Cu dry-fill proce...

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Bibliographic Details
Main Authors: Yu, K., Oie, T. Hasegawa M., Amano, F., Consiglio, S., Wajda, C., Maekawa, K., Leusink, G.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Dielectrics
Electrical resistance measurement
Metallization
Resistance
Online Access:Request full text
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Summary:Cu-fill extendability is demonstrated with a novel integration scheme using clustered ALD barrier, CVD Ru liner and PVD Cu dry-fill processes. ALD barrier films were developed and integrated with a 2nm CVD-Ru (replacing the traditional PVD Ta and PVD Cu seed), and a single-step PVD Cu dry-fill process for bottom-up via and trench fill. Line resistance and barrier integrity data complement the Cu-fill performance.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2014.6831857