3 μm GaSb-based type-i quantum-well diode lasers with cascade pumping scheme

GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperat...

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Bibliographic Details
Main Authors: Rui Liang, Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Gas lasers
Laser excitation
Optical pulses
Optical superlattices
Quantum cascade lasers
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Summary:GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.
ISSN:2160-8989
2160-9004