Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy

Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.

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Bibliographic Details
Main Authors: Connelly, Blair C., Woodward, Nathaniel T., Metcalfe, Grace D., Rodak, Lee E., Das, Naresh C., Reed, Meredith L., Sampath, Anand V., Shen, Hongen, Wraback, Michael, Farrell, Robert M., Iza, Michael, Cruz, Samantha C., Lang, Jordan R., Young, Nathan G., Terao, Yutaka, Neufeld, Carl J., Keller, Stacia, Nakamura, Shuji, DenBaars, Steven P., Mishra, Umesh K., Speck, James S.
Format: Conference Proceeding
Language:English
Subjects:
Electric fields
Gallium nitride
Junctions
Laser excitation
Photovoltaic cells
Physics
Temperature measurement
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Summary:Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.
ISSN:2160-8989
2160-9004