Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes

This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.

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Bibliographic Details
Main Authors: Su, Vincent, Po-Hsun Chen, Ming-Lun Lee, Yao-Hong You, Cheng-Ju Hsieh, Chieh-Hsiung Kuan, Yi-Chi Chen, Hung-Chou Lin, Han-Bo Yang, Ray-Ming Lin, Quan-Yi Lee, Fu-Chuan Chu
Format: Conference Proceeding
Language:English
Subjects:
Density measurement
Gallium nitride
Light emitting diodes
Quantum well devices
Stark effect
Strain
Substrates
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Description
Summary:This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.
ISSN:2160-8989
2160-9004
DOI:10.1364/CLEO_AT.2013.JW2A.84