Compact UWB resistive feedback low noise amplifier utilizing current bleeding technique

In this paper, a low-noise amplifier (LNA) designed for the lower band of the ultra-wideband (UWB) spectrum and implemented in 0.18 μm CMOS process is presented. Post-layout simulations show a power gain (S 21 ) of 11.18 dB with 0.8 dB value variations from 259 MHz to 5 GHz. The input and output ret...

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Bibliographic Details
Main Authors: Djugova, A., Radic, J., Videnovic-Misic, M., Nagy, L., Zivanov, Lj
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Impedance
Impedance matching
Noise
Resistors
Simulation
Transistors
Online Access:Request full text
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Summary:In this paper, a low-noise amplifier (LNA) designed for the lower band of the ultra-wideband (UWB) spectrum and implemented in 0.18 μm CMOS process is presented. Post-layout simulations show a power gain (S 21 ) of 11.18 dB with 0.8 dB value variations from 259 MHz to 5 GHz. The input and output return losses, S 11 and S 22 , are below -10 dB from 466.4 MHz to 5.63 GHz, while reverse isolation (S 12 ) is better than -24.44 dB across the whole simulated range, from 100 MHz to 7 GHz. The average value of noise figure (NF) is 4.48 dB, with minimum value of 4.24 dB at 1.37 GHz. The input-referred third-order intercept point (IIP 3 ) and the input-referred 1-dB compression point (P 1dB ) are -12.72 dBm and -20.9 dBm, respectively. The LNA core area occupies 0.353 mm 2 and consumes 11.16 mW from a 1.8 V supply.
DOI:10.1109/MIEL.2014.6842171