Novel process window and product yield improvement by eliminating contact shorts

Severe and unexpected yield loss (~26% in avg.) is found in the early development stage of the advanced flash memory. The major failure mode, array bridging contact, is revealed as the root cause and mainly induced by undercutting photo-resist (PR) profile. In this work, a novel scheme, anti-etch bo...

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Bibliographic Details
Main Authors: Yuan-Chieh Chiu, Shih-Ping Hong, Fang-Hao Hsu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Format: Conference Proceeding
Language:English
Subjects:
contact bridging
Contacts
Dielectrics
dual ARC
Etching
Flash memories
flash memory
Manufacturing
plasma etching
PR profile
Scanning electron microscopy
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Summary:Severe and unexpected yield loss (~26% in avg.) is found in the early development stage of the advanced flash memory. The major failure mode, array bridging contact, is revealed as the root cause and mainly induced by undercutting photo-resist (PR) profile. In this work, a novel scheme, anti-etch bottom anti-reflective coating (anti-etch BARC), is used instead of the conventional dual ARC (BARC/dielectric ARC, DARC) stacks on amorphous carbon layer (ACL) for contact hole patterning. Herein, we successfully demonstrate to eliminate the failure issue, greatly improve the yield and provide a promising solution with manufacturing feasibility.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2014.6846947