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A W-band divide-by-1.5 injection-locked frequency divider in 90 nm CMOS process
A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the po...
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Main Authors: | , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation frequency is 30.74 GHz. The dc supply voltage and power consumption are 0.8 V and 6.4 mW, respectively. The chip size is 0.86 Ă— 0.87 mm 2 . |
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ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2014.6848332 |