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A W-band divide-by-1.5 injection-locked frequency divider in 90 nm CMOS process

A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the po...

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Bibliographic Details
Main Authors: Yen-Liang Yeh, Meng-Han Li, Hong-Yeh Chang
Format: Conference Proceeding
Language:English
Subjects:
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Summary:A W-band divide-by-1.5 injection-locked frequency divider (ILFD) using 90 nm CMOS process is presented in this paper. Due to the fractional frequency division, the proposed divide-by-1.5 ILFD can be employed in a millimeter-wave local oscillation chain to avoid the injection pulling caused by the power amplifier. The measured input locking range is from 91 to 93.7 GHz, and the free-running oscillation frequency is 30.74 GHz. The dc supply voltage and power consumption are 0.8 V and 6.4 mW, respectively. The chip size is 0.86 Ă— 0.87 mm 2 .
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2014.6848332