Non-contact probes for device and integrated circuit characterization in the THz and mmW bands

We present a novel, non-contact, on-wafer device characterization method covering both THz (300 GHz-3 THz) and mmW bands (60-300 GHz). Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probe setup is based on radiative cou...

Full description

Saved in:
Bibliographic Details
Main Authors: Caglayan, Cosan, Trichopoulos, Georgios C., Sertel, Kubilay
Format: Conference Proceeding
Language:English
Subjects:
Antennas
Calibration
millimeter waves
on-wafer measurements
Semiconductor device measurement
sub-millimeter waves
terahertz
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a novel, non-contact, on-wafer device characterization method covering both THz (300 GHz-3 THz) and mmW bands (60-300 GHz). Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probe setup is based on radiative coupling of vector network analyzer test ports into the coplanar waveguide environment of monolithic devices and integrated circuits via planar, on-chip, broadband antennas. The on-chip antennas act as "virtual" probe-tips on the test wafer and connect to the device through optimized, impedance matched coplanar waveguide (CPW) lines. Proof-of-concept validation is presented for the 325-750 GHz band using WR2.2 and WR1.5 frequency extender modules and a standard vector network analyzer as the backend. Owing to the non-contact nature, these new probes are free from wear/tear and fragility issues. More importantly, they are low cost and can be easily scaled beyond 900GHz where there is no existing solution for on-wafer device and integrated circuit testing.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2014.6848606