K-band FMCW radar CMOS front-end ICs with 13.3 dBm output power

This paper presents CMOS front-end ICs with 13.3 dBm output power for K-band FMCW radar, which is integrated in 0.13-μm CMOS technology. The transmitter consists of a voltage controlled oscillator, divider chain, power amplifier, and additional buffers. The receiver consists of a low-noise amplifier...

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Bibliographic Details
Main Authors: Gitae Pyo, Jaemo Yang, Hyunji Ku, Choul-Young Kim, Songcheol Hong
Format: Conference Proceeding
Language:English
Subjects:
CMOS
CMOS integrated circuits
Frequency modulated continuous wave (FMCW)
K-band
Power amplifiers
Power generation
Radar measurements
radar receiver
radar transmitter
Receivers
Voltage-controlled oscillators
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Summary:This paper presents CMOS front-end ICs with 13.3 dBm output power for K-band FMCW radar, which is integrated in 0.13-μm CMOS technology. The transmitter consists of a voltage controlled oscillator, divider chain, power amplifier, and additional buffers. The receiver consists of a low-noise amplifier, IQ mixers, an IQ generator, and buffers. The leakage problem can be mitigated by adopting differential topology and ground shielding. As a result, the receiver achieves a conversion gain of 35.7 dB, a P1dB of -31.6 dBm, and a DSB noise figure of 5.5 dB. The transmitter achieves the tuning range of 23.8~24.5 GHz and the phase noise of -104 dBc/Hz @ 1MHz offset. The receiver and transmitter chips consume 121.5 mW and 373.5 mW from a 1.5 V power supply, respectively. Using these two chips, the K-band FMCW radar module is implemented and verified by measuring the distance of an object.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2014.6851663