On the reliability of SiGe HBT cascode driver amplifiers

This paper investigates the RF reliability of SiGe HBT cascode driver amplifiers. By subtracting capacitive currents internal to the common-base device from its collector waveform, a more accurate depiction of electrical stress in the I-V plane is achieved, and from this revised load line, RF stress...

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Main Authors: Oakley, Michael A., Wier, Brian, Raghunathan, Uppili S., Chakraborty, Partha S., Cressler, John D.
Format: Conference Proceeding
Language:English
Subjects:
Base leakage
breakdown
cascode
Electric breakdown
HBT
Heterojunction bipolar transistors
power amplifier
Radio frequency
Reliability
RF stress
safe operating area
SiGe
Silicon germanium
Stress
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creator Oakley, Michael A.
Wier, Brian
Raghunathan, Uppili S.
Chakraborty, Partha S.
Cressler, John D.
description This paper investigates the RF reliability of SiGe HBT cascode driver amplifiers. By subtracting capacitive currents internal to the common-base device from its collector waveform, a more accurate depiction of electrical stress in the I-V plane is achieved, and from this revised load line, RF stress data is better correlated to DC stress data. This novel analysis technique provides a framework for designers to simulate the effects of RF stress using DC data from both TCAD models and measurements, allowing for optimized performance in high power and high frequency applications where reliability concerns often lead to under-utilization of the transistor's capabilities.
doi_str_mv 10.1109/RFIC.2014.6851763
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subjects Base leakage
breakdown
cascode
Electric breakdown
HBT
Heterojunction bipolar transistors
power amplifier
Radio frequency
Reliability
RF stress
safe operating area
SiGe
Silicon germanium
Stress
title On the reliability of SiGe HBT cascode driver amplifiers
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