Irradiation effects in ultrathin Si/SiO/sub 2/ structures

The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1998-06, Vol.45 (3), p.1407-1411
Main Authors: Cantin, J.L., von Bardeleben, H.J., Autran, J.L.
Format: Article
Language:English
Subjects:
Current measurement
Electric variables
Electric variables measurement
Electrons
Hydrogen
Paramagnetic materials
Paramagnetic resonance
Passivation
Silicon
Spectroscopy
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Summary:The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.685215