2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ∼ 0.4V, high...

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Bibliographic Details
Main Authors: Unni, Vineet, Long, Hong, Sweet, Mark, Balachandran, Ajith, Narayanan, E. M. Sankara, Nakajima, Akira, Kawai, Hiroji
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Anodes
Capacitance
Gallium nitride
HEMTs
MODFETs
Schottky diodes
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Summary:This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ∼ 0.4V, high reverse blocking voltage (V BR ) of ∼ 2400V, specific on-state resistance (R ON .A) of ∼ 14 mΩ.cm 2 and a Power Device Figure of Merit (PDFOM = V BR 2 /R ON .A) of ∼ 400 MW/cm 2 .
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6856022