Thermal Modeling of Multi-Fin Field Effect Transistor Structure Using Proper Orthogonal Decomposition

An approach is proposed to project thermal behavior in a semiconductor integrated-circuit structure onto a functional space based on the proper orthogonal decomposition (POD). The approach substantially reduces the numerical degrees of freedom (DOF) needed for thermal simulations and requires no ass...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-08, Vol.61 (8), p.2752-2759
Main Authors: Wangkun Jia, Helenbrook, Brian T., Ming-Cheng Cheng
Format: Article
Language:English
Subjects:
Compact thermal model (CTM)
Computer simulation
Degrees of freedom
Eigenvalues and eigenfunctions
FinFET
FinFETs
Heat transmission
Heating
Integrated circuit modeling
Junctions
Mathematical analysis
Mathematical models
Numerical models
Proper Orthogonal Decomposition
proper orthogonal decomposition (POD)
reduced-order model (ROM)
Semiconductors
Synchronization
Thermal simulation
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Summary:An approach is proposed to project thermal behavior in a semiconductor integrated-circuit structure onto a functional space based on the proper orthogonal decomposition (POD). The approach substantially reduces the numerical degrees of freedom (DOF) needed for thermal simulations and requires no assumptions about physical geometry, dimensions, or heat flow paths. The POD approach is applied to a multi-fin FinFET structure having heat sources driven by power pulse excitations with time shifts, width variations, and amplitude modulations. The POD models were compared with detailed numerical simulations (DNS) and it was shown that the POD approach provides thermal solutions that were as accurate and detailed as the DNS. It offers a reduction in numerical DOFs by nearly six orders of magnitude to capture the peak temperatures in multi-fin FinFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2332414