Scaling and reliability of NAND flash devices

Numerous scaling limitations of NAND flash memory have arisen due to the intrinsic nature of the operational principle of NAND flash memory and those limitations eventually lead to a paradigm shift in the NAND flash technology from the planar cell to the vertical NAND cell. In this paper, the limita...

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Bibliographic Details
Main Authors: Youngwoo Park, Jaeduk Lee, Seong Soon Cho, Gyoyoung Jin, Eunseung Jung
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
Flash memories
Interference
Logic gates
Microprocessors
NAND Flash memory
Nonvolatile memory
planar NAND
Reliability
scaling down
vertical NAND
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Summary:Numerous scaling limitations of NAND flash memory have arisen due to the intrinsic nature of the operational principle of NAND flash memory and those limitations eventually lead to a paradigm shift in the NAND flash technology from the planar cell to the vertical NAND cell. In this paper, the limitations of scaling which induce the evolution of the NAND cell as well as the current trends of NAND technology are reviewed.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2014.6860599