A low-power fully-integrated SP10T-RF-switch-IC

A new architecture has been designed and demonstrated for a low-power SP10T-RF-Switch-IC using 0.18μm SOI-CMOS, implementing an RF-Switch, negative voltage generator, and MIPI in a chip. Clock frequency of the negative voltage generator is controlled to increase only in a switch transition and drop...

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Bibliographic Details
Main Authors: Wachi, Yusuke, Kawamoto, Takashi, Maeki, Akira, Masuda, Toru
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
CMOS
Negative-Voltage-Generator
Radio frequency
RF-Switch
SOI
Switches
Time-frequency analysis
Timing
Transistors
Online Access:Request full text
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Description
Summary:A new architecture has been designed and demonstrated for a low-power SP10T-RF-Switch-IC using 0.18μm SOI-CMOS, implementing an RF-Switch, negative voltage generator, and MIPI in a chip. Clock frequency of the negative voltage generator is controlled to increase only in a switch transition and drop at other times in order to reduce power consumption. Results of an evaluation of a trial chip confirmed a 33% reduction in power consumption compared with conventional architecture while RF performance is maintained.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2014.6865233